BF998(2007) データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

BF998
(Rev.:2007)

Silicon N_Channel MOSFET Tetrode

Infineon Technologies 

BF998...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Forward transconductance

gfs

VDS = 8 V, ID = 10 mA, VG2S = 4 V

Gate1 input capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cg1ss

20 24

--

-

2.1 2.5 pF

Gate 2 input capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cg2ss

-

1.2

- pF

Feedback capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cdg1

-

25

- fF

Output capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cdss

-

1.1

- pF

Power gain

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 45 MHz

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

Gp

dB

-

28

-

-

20

-

Noise figure

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 45 MHz

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

F

dB

-

2.8

-

-

1.8

-

Gain control range

VDS = 8 V, VG2S = 4 ...-2 V, f = 800 MHz

∆Gp

40 50

-

3

2007-04-20

Share Link: