BF998W データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

BF998W

Silicon N_Channel MOSFET Tetrode

Infineon Technologies 

BF998...

Silicon N_Channel MOSFET Tetrode

• Short-channel transistor

with high S / C quality factor

• For low-noise, gain-controlled

input stage up to 1 GHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BF998

BF998R

BF998W

Package

Pin Configuration

SOT143 1=S 2=D 3=G2 4=G1 -

-

SOT143R 1=D 2=S 3=G1 4=G2 -

-

SOT343 1=D 2=S 3=G1 4=G2 -

-

Maximum Ratings

Parameter

Drain-source voltage

Continuous drain current

Gate 1/ gate 2-source current

Total power dissipation

TS ≤ 76 °C, BF998, BF998R

TS ≤ 94 °C, BF998W

Storage temperature

Channel temperature

Thermal Resistance

Parameter

Channel - soldering point1)

BF998, BF998R

BF998W

Symbol

VDS

ID

±IG1/2SM

Ptot

Tstg

Tch

Symbol

Rthchs

Value

12

30

10

200

200

-55 ... 150

150

Value

≤ 370

≤ 280

1For calculation of RthJA please refer to Application Note Thermal Resistance

Marking

MOs

MRs

MR

Unit

V

mA

°C

Unit

K/W

1

Feb-13-2004

Share Link: