BF998 データシートの表示（PDF） - Infineon Technologies

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BF998

Silicon N_Channel MOSFET Tetrode

Infineon Technologies 

Electrical Characteristics

Parameter

DC Characteristics

Drain-source breakdown voltage

ID = 10 µA, VG1S = -4 V, VG2S = -4 V

Gate 1 source breakdown voltage

±IG2S = 10 mA, VG2S = VDS = 0

Gate2 source breakdown voltage

±IG2S = 10 mA, VG2S = VDS = 0

Gate 1 source leakage current

±VG1S = 5 V, VG2S = VDS = 0

Gate 2 source leakage current

±VG2S = 5 V, VG2S = VDS = 0

Drain current

VDS = 8 V, VG1S = 0 , VG2S = 4 V

Gate 1 source pinch-off voltage

VDS = 8 V, VG2S = 4 V, ID = 20 µA

Gate 2 source pinch-off voltage

VDS = 8 V, VG1S = 0 , ID = 20 µA

BF998...

Symbol

Values

Unit

min. typ. max.

V(BR)DS

12

-

-V

±V(BR)G1SS 8

±V(BR)G2SS 8

±IG1SS

-

±IG2SS

-

IDSS

5

-

12

-

12

-

50 nA

-

50 nA

9

15 mA

-VG1S(p)

-

0.8 2.5 V

-VG2S(p)

-

0.8

2

2

Feb-13-2004

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