BF824 データシートの表示（PDF） - NXP Semiconductors.
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BF824 Datasheet PDF : 6 Pages
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NXP Semiconductors
PNP medium frequency transistor
Product data sheet
BF824
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−4
−25
−25
250
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VBE
base-emitter voltage
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = −30 V
IC = 0; VEB = −4 V
IC = −1 mA; VCE = −10 V
IC = −4 mA; VCE = −10 V
IC = −4 mA; VCE = −10 V
IC = 0; VCE = −10 V; f = 1 MHz
VCE = −10 V; f = 100 MHz
IC = −1 mA
IC = −4 mA
IC = −8 mA
MIN.
−
−
25
25
−
−
TYP.
−
−
45
50
−
−
MAX.
−50
−100
−
−
−900
0.3
UNIT
nA
nA
mV
pF
250 350 −
400 450 −
390 440 −
MHz
MHz
MHz
2004 Jan 16
3
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