BFG11W データシートの表示（PDF） - Philips Electronics
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BFG11W Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 2 GHz power transistor
Product specification
BFG11W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to Ts = 60 °C; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
20
8
2.5
500
760
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point up to Ts = 60 °C;
Ptot = 760 mW; note 1
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector tab.
VALUE
150
UNIT
K/W
handbook1, 0fu3ll pagewidth
Zth j-s
(K/W)
102
10
δ=
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0.1
1
10−6
10−5
10−4
10−3
MGD411
10−2
P
δ
=
tp
T
tp
t
T
10−1
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1996 Jun 04
3
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