BFG25AW データシートの表示（PDF） - NXP Semiconductors.
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BFG25AW Datasheet PDF : 14 Pages
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NXP Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG25AW;
BFG25AW/X
FEATURES
Low current consumption
(100 A to 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
PINNING
PIN
DESCRIPTION
BFG25AW
1 collector
2 base
3 emitter
4 emitter
BFG25AW/X
1 collector
2 emitter
3 base
4 emitter
lfpage
4
3
1
Top view
2
MBK523
Fig.1 SOT343N.
MARKING
TYPE NUMBER
BFG25AW
BFG25AW/X
CODE
N6
V1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
GUM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
F
noise figure
CONDITIONS
MIN.
open emitter
open base
Ts 85 C
IC = 0.5 mA; VCE = 1 V
50
IC = 0; VCE = 1 V; f = 1 MHz
IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C 3.5
IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C
s opt; IC = 1 mA; VCE = 1 V; f = 1 GHz
TYP. MAX. UNIT
8
V
5
V
6.5 mA
500 mW
80 200
0.2 0.3 pF
5
GHz
16
dB
2
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
Ts 85 C; see Fig.2; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
65
MAX.
8
5
2
6.5
500
+150
175
UNIT
V
V
V
mA
mW
C
C
1998 Sep 23
2
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