BFG25AW データシートの表示（PDF） - NXP Semiconductors.

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BFG25AW

NPN 5 GHz wideband transistors

NXP Semiconductors. 

NXP Semiconductors

Product specification

NPN 5 GHz wideband transistors

BFG25AW; BFG25AW/X

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point Ts  85 C; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

VALUE

180

UNIT

K/W

CHARACTERISTICS

Tj = 25 C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage IC = 100 A; IE = 0





8

V

V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0





5

V

V(BR)EBO emitter-base breakdown voltage IE = 100 A; IC = 0





2

V

ICBO

collector leakage current

open emitter; VCB = 5 V; IE = 0 



50

nA

hFE

DC current gain

IC = 0.5 mA; VCE = 1 V

50

80

200

Cre

feedback capacitance

IC = 0; VCE = 1 V; f = 1 MHz



0.2 0.3 pF

fT

transition frequency

IC = 1 mA; VCE = 1 V; f = 1 GHz; 3.5 5



GHz

Tamb = 25 C

GUM

maximum unilateral power gain;

note 1

IC = 0.5 mA; VCE = 1 V;

f = 1 GHz; Tamb = 25 C



16



dB

IC = 0.5 mA; VCE = 1 V;

f = 2 GHz; Tamb = 25 C



8



dB

F

noise figure

s  opt; IC = 0.5 mA; VCE = 1 V; 

1.9 

dB

f = 1 GHz

s  opt; IC = 1 mA; VCE = 1 V; 

2

dB

f = 1 GHz

Note

1.

GUM is the maximum unilateral power gain, assuming S12 is zero.

GUM

=

10

log

------------------------S----2---1----2-----------------------

1 – S11 21 – S22 2

dB.

1998 Sep 23

3

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