BFG541 データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
BFG541 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
NPN 9 GHz wideband transistor
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
DESCRIPTION
NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
The transistors are mounted in a
plastic SOT223 envelope.
Product specification
BFG541
page
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
September 1995
2
Share Link: 