BFG541 データシートの表示（PDF） - Philips Electronics
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BFG541 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCES
IC
Ptot
hFE
Cre
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
GUM
maximum unilateral power gain
S212
F
PL1
ITO
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
RBE = 0
−
−
20
V
−
−
15
V
−
−
120 mA
up to Ts = 140 °C; note 1
−
IC = 40 mA; VCE = 8 V; Tj = 25 °C 60
IC = 0; VCB = 8 V; f = 1 MHz
−
IC = 40 mA; VCE = 8 V; f = 1 GHz;
−
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz; −
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
−
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz; 13
Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
−
f = 900 MHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; RL = 50 Ω; −
f = 900 MHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; RL = 50 Ω; −
f = 900 MHz; Tamb = 25 °C
−
650
120 250
0.7 −
9
−
mW
pF
GHz
15 −
dB
9
−
dB
14 −
dB
1.3 1.8 dB
21 −
dBm
34 −
dBm
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
RBE = 0
open collector
up to Ts = 140 °C; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
120
650
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 140 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
55 K/W
September 1995
3
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