BFG541 データシートの表示（PDF） - Philips Electronics
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BFG541 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
S212
F
insertion power gain
noise figure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
Vo
output voltage
d2
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
Ic = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
Ic = 40 mA; VCE = 8 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
note 2
note 3
note 4
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and at f(2p−q) = 904 MHz.
MIN. TYP. MAX. UNIT
−
−
50 nA
60 120 250
−
2
−
pF
−
1
−
pF
−
0.7 −
pF
−
9
−
GHz
−
15 −
dB
−
9
−
dB
13 14 −
dB
−
1.3 1.8 dB
−
1.9 2.4 dB
−
2.1 −
dB
−
21 −
dBm
−
34 −
−
500 −
−
−50 −
dBm
mV
dB
3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = Zs = 75 Ω; Tamb = 25 °C;
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz
4. IC = 40 mA; VCE = 8 V; Vo = 325 mV; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz;
measured at f(p+q) = 810 MHz
September 1995
4
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