BFG541 データシートの表示（PDF） - Philips Electronics
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BFG541 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
handboo–k,2h0alfpage
d im
(dB)
–30
MEA977
–40
–50
–60
–70
10
20
30
40
50
60
I C (mA)
Fig.10 Intermodulation distortion as a function of
collector current.
handboo–k,2h0alfpage
d2
(dB)
–30
MEA976
–40
–50
–60
–70
10
20
30
40
50
60
I C (mA)
Fig.11 Second order intermodulation distortion as
a function of collector current.
5
handbook, halfpage
Fmin
(dB)
4
3
2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
Gass
Fmin
MRA666 20
Gass
(dB)
f = 900 MHz 15
1000 MHz
10
2000 MHz
5
0
0
1
VCE = 8 V.
−5
10
IC (mA)
100
Fig.12 Minimum noise figure and associated
available gain as functions of collector
current.
5
handboFomk,inhalfpageIC =10 mA
(dB)
4
40 mA
Gass
3
MRA667
20
Gass
(dB)
15
10
2
5
40 mA
Fmin
1 10 mA
0
0
102
VCE = 8 V.
−5
103
f (MHz)
104
Fig.13 Minimum noise figure and associated
available gain as functions of frequency.
September 1995
7
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