BFQ151 データシートの表示（PDF） - Philips Electronics
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BFQ151 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP video transistor
Product specification
BFQ151
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature of the soldering point of the collector pin.
VALUE UNIT
90
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
fT
Cre
collector-base breakdown voltage IC = −0.1 mA; IE = 0
collector-emitter breakdown voltage IC = −10 mA; IB = 0
emitter-base breakdown voltage IC = 0; IE = −0.1 mA
collector-base leakage current
DC current gain
VCB = −10 V; IE = 0
IC = −70 mA; VCE = −10 V;
see Fig.3
transition frequency
IC = −70 mA; VCE = −10 V;
fm = 500 MHz; Tamb = 25 °C;
see Fig.5
feedback capacitance
IC = 0; VCB = −10 V;
f = 1 MHz; see Fig.4
MIN.
−20
−15
−3
−
25
TYP.
−
−
−
−
−
MAX.
−
−
−
−1
−
UNIT
V
V
V
µA
−
3.5
−
GHz
−
1.8
−
pF
1.6
handbook, halfpage
Ptot
(W)
1.2
0.8
0.4
0
0
MBK241
100
Ts (oC)
200
Fig.2 Power derating curve.
1997 Sep 19
80
handbook, halfpage
hFE
60
MBK242
40
20
0
0
−20
−40
−60
−80 −100
IC (mA)
VCE = −10 V; Tamb = 25 °C.
Fig.3 DC current gain as a function of
collector current; typical values.
3
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