BFG505W-X データシートの表示（PDF） - NXP Semiconductors.

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BFG505W-X

NPN 9 GHz wideband transistors

NXP Semiconductors. 

Philips Semiconductors

Product specification

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X;

BFG505W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

VCBO

VCES

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

junction temperature

CONDITIONS

open emitter

RBE = 0

open collector

Ts ≤ 85 °C; see Fig.3; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

MIN.

−

−

−

−

−

−65

−

MAX.

20

15

2.5

18

500

+150

175

UNIT

V

V

V

mA

mW

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

VALUE

180

UNIT

K/W

600

handbook, halfpage

P tot

(mW)

400

MBG248

200

0

0

50

100

150

Ts

(o C) 200

Fig.3 Power derating curve.

2000 Oct 30

3

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