BFG590-X データシートの表示（PDF） - NXP Semiconductors.
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BFG590-X Datasheet PDF : 11 Pages
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NXP Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
Ts ≤ 60 °C; see Fig.2; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
3
200
400
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
290
UNIT
K/W
600
handbook, halfpage
Ptot
(mW)
400
MBG249
200
0
0
50
100
150
200
Ts (o C)
Fig.2 Power derating curve.
Rev. 04 - 12 November 2007
3 of 11
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