BFG590-X データシートの表示（PDF） - NXP Semiconductors.
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BFG590-X Datasheet PDF : 11 Pages
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NXP Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
fT
collector-base breakdown voltage IC = 0.1 mA; IE = 0
collector-emitter breakdown voltage IC = 10 mA; IB = 0
emitter-base breakdown voltage IE = 0.1 mA; IC = 0
collector-base leakage current
VCB = 10 V; IE = 0
DC current gain
IC = 70 mA; VCE = 8 V; see Fig.3
transition frequency
IC = 80 mA; VCE = 4 V;
f = 1 GHz; see Fig.5
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz;
see Fig.4
GUM
|S21|2
maximum unilateral power gain;
note 1
insertion power gain
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
IC = 80 mA; VCE = 4 V; f = 2 GHz;
Tamb = 25 °C
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
MIN.
20
15
3
−
60
−
−
−
−
−
TYP.
−
−
−
−
120
5
0.7
13
7.5
11
MAX. UNIT
−
V
−
V
−
V
100 nA
250
−
GHz
−
pF
−
dB
−
dB
−
dB
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM
=
10
log --(--1-----–------S----1---1----S2---)-2---1(---1-2----–------S----2--2-----2---)-
dB.
Rev. 04 - 12 November 2007
4 of 11
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