BFR520 データシートの表示（PDF） - Philips Electronics
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BFR520 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
RBE = 0
open collector
up to Ts = 97 °C; note 1
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-s
from junction to soldering point (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN. MAX. UNIT
−
20
V
−
15
V
−
2.5 V
−
70
mA
−
300 mW
−65 150 °C
−
175 °C
THERMAL RESISTANCE
260 K/W
September 1995
3
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