BFR520 データシートの表示（PDF） - Philips Electronics
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BFR520 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral
power gain (note 1)
S212
F
insertion power gain
noise figure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
IE = 0; VCB = 6 V
IC = 20 mA; VCE = 6 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
IC = 20 mA; VCE = 6 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
note 2
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
MIN. TYP. MAX. UNIT
− − 50 nA
60 120 250
−1−
pF
− 0.5 −
pF
− 0.4 −
pF
−9−
− 15 −
GHz
dB
−9−
dB
13 14 −
dB
− 1.1 1.6 dB
− 1.6 2.1 dB
− 1.9 −
dB
− 17 −
dBm
− 26 −
dBm
September 1995
4
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