BFS520 データシートの表示（PDF） - NXP Semiconductors.
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BFS520 Datasheet PDF : 13 Pages
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NXP Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS520
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 118 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
190 K/W
CHARACTERISTICS
Tj = 25 C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Ce
Cc
Cre
fT
GUM
S212
F
PL1
ITO
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
IE = 0; VCE = 6 V
IC = 20mA; VCE = 6 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C
s = opt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C
s = opt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C
s = opt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 C
Ic = 20 mA; VCE = 6 V; RL = 50 ;
f = 900 MHz; Tamb = 25 C
note 2
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10
log
------------------------S----2---1----2-----------------------
1 – S11 21 – S22 2
dB.
MIN. TYP. MAX. UNIT
50 nA
60 120 250
1
pF
0.5
pF
0.4
pF
9
GHz
15
dB
9
dB
13 14
dB
1.1 1.6 dB
1.6 2.1 dB
1.9
dB
17
dBm
26
dBm
2. IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C;
fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz and at f(2qp) = 904 MHz.
September 1995
3
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