BGA428(2002) データシートの表示（PDF） - Infineon Technologies

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BGA428
(Rev.:2002)

High Gain, Low Noise Amplifier

Infineon Technologies 

BGA428

Maximum Ratings

Parameter

Device voltage

Total Device Current3)

Voltage at pin Out

Current into pin In

Voltage at pin GS

Total power dissipation, Ts < 125°C1)

Junction temperature

Operating temperature range

Storage temperature range

Thermal resistance: junction-soldering point

Input power2)

Symbol

VCC

Itot

VOut

IIN

VGS

Ptot

Tj

TOP

TSTG

Rth JS

PIN

Value

4

12

4

0.5

3.5

50

150

-40 ..+85

-65 ... +150

220

8

Notes:

All Voltages refer to GND-Node

1) Ts is measured on the ground lead at the soldering point

2) Valid for a) ZL=50Ω and ZS=50Ω,=VCC=2.7V, VOUT=2.7V, VGS=0.0V, GND=0.0V

and b) ZL=50Ω and ZS=50Ω,=VCC=0.0V, VOUT=0.0V, VGS=2.7V, GND=0.0V

3) Itot= Current into OUT + Current into VCC

Unit

V

mA

V

mA

V

mW

°C

°C

°C

K/W

dBm

Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)

VCC=2.7V, Frequency=1.8GHz, unless otherwise specified

Parameter

Symbol min. typ. max. Unit

Maximum available power gain

Noise figure (ZS=50Ω)

Input power at 1dB gain compression

Input third order intercept point

Total device current

Insertion loss in gain-step-mode

Vcc=0.0V, VCTRL=2.7V, RCTRL=3kΩ

GMA

NF

P-1dB

IIP3

Itot

LGS

20

dB

1.4

dB

-19

dBm

-9

dBm

8.2

mA

13.5

dB

Data sheet

5

2002-03-26

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