BGX50A データシートの表示（PDF） - Siemens AG

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BGX50A

Silicon Switching Diode Array

Siemens AG 

BGX 50 A

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Forward voltage per diode

IF = 100 mA

Reverse current per diode

VR = 50 V

VR = 50 V, TA = 150 ˚C

AC characteristics

Diode capacitance

VR = 0, f = 1 MHz

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 Ω

measured at IR = 1 mA

Test circuit for reverse recovery time

Symbol

Values

Unit

min. typ. max.

VF

–

–

1.3 V

IR

µA

–

–

0.2

–

–

100

CD

–

–

1.5 pF

trr

–

–

6

ns

Pulse generator: tp = 100 ns, D = 0.05

tr = 0.6 ns, Rj = 50 Ω

Oscillograph: R = 50 Ω

tr = 0.35 ns

C ≤ 1 pF

Semiconductor Group

2

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