BGX50A(2001) データシートの表示（PDF） - Infineon Technologies

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BGX50A
(Rev.:2001)

Silicon Switching Diode Array

Infineon Technologies 

BGX50A

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Forward voltage

IF = 100 mA

Reverse current

VR = 50 V

Reverse current

VR = 50 V, TA = 150 °C

VF

-

-

1.3 V

IR

-

-

0.2 µA

IR

-

- 100

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 ,

measured at IR = 1mA

CD

-

-

1.5 pF

t rr

-

-

6 ns

Test circuit for reverse recovery time

D.U.T.

Oscillograph

ΙF

Pulse generator: tp = 100ns, D = 0.05,

tr = 0.6ns, Ri = 50

EHN00019

Oscillograph: R = 50 , tr = 0.35ns,

C  1pF

2

Jul-31-2001

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