BGX50A データシートの表示（PDF） - Infineon Technologies

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BGX50A

Silicon Switching Diode Array

Infineon Technologies 

BGX50A...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

DC Characteristics

Breakdown voltage

Reverse current

VR = 50 V

VR = 50 V, TA = 150 °C

V(BR)

IR

-

-

-

-

-

0.2

-

- 100

Forward voltage

IF = 100 mA

VF

-

-

1.3

Unit

µA

V

AC Characteristics

Diode capacitance

CT

VR = 0 V, f = 1 MHz

Reverse recovery time

trr

IF = 10 mA, IR = 10 mA, measured at IR = 1mA ,

RL = 100 Ω

-

-

1.5 pF

-

-

6 ns

Test circuit for reverse recovery time

D.U.T.

Oscillograph

ΙF

Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,

Ri = 50Ω

Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF

EHN00019

2

2007-03-27

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