BGX400 データシートの表示（PDF） - Infineon Technologies

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BGX400

Silicon Switching Diodes

Infineon Technologies 

BGX400

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Breakdown voltage

I(BR) = 100 µA

Forward voltage

IF = 1 A

IF = 2 A

Reverse current

VR = 400 V

V(BR)

VF

IR

400 -

-V

-

-

1.6

-

-

2

-

-

1 µA

Reverse current

VR = 400 V, TA = 150 °C

IR

-

-

50

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = 200 mA, IR = 200 mA, RL = 100 ,

measured at IR = 20mA

CD

-

10

- pF

trr

-

1

- µs

Test circuit for reverse recovery time

D.U.T.

ΙF

Oscillograph

EHN00022

Pulse generator: tp = 10µs, D = 0.05,

 tr = 0.6ns, Ri = 50

Oscillograph: R = 50 , tr = 0.35ns,

C 1pF

2

Aug-20-2001

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