BLF642 データシートの表示（PDF） - NXP Semiconductors.
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BLF642 Datasheet PDF : 12 Pages
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BLF642
Broadband power LDMOS transistor
Rev. 2 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at Th = 25 C in a common source test circuit.
Mode of operation
f
VDS
PL
(MHz)
(V)
(W)
CW, class-AB
1300
32
35
2-tone, class-AB
1300
32
17.5
Gp
(dB)
19
19
D
IMD
(%) (dBc)
63
-
48
28
1.2 Features and benefits
CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.2 A :
Average output power = 35 W
Power gain = 19 dB
Drain efficiency = 63 %
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.2 A :
Average output power = 17.5 W
Power gain = 19 dB
Drain efficiency = 48 %
Intermodulation distortion = 28 dBc
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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