BLF878(2008) データシートの表示（PDF） - NXP Semiconductors.
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BLF878 Datasheet PDF : 18 Pages
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NXP Semiconductors
BLF878
UHF power LDMOS transistor
7.3 Ruggedness in class-AB operation
The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated
power.
7.4 Impedance information
ZL
drain
Zi
gate
001aai086
Fig 12. Definition of transistor impedance
Table 8. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W.
f
Zi
ZL
MHz
Ω
Ω
300
0.933 − j1.376
6.431 − j4.296
325
0.959 − j0.986
6.889 − j3.911
350
0.988 − j0.628
7.237 − j3.476
375
1.020 − j0.295
7.475 − j3.017
400
1.057 + j0.017
7.610 − j2.559
425
1.097 + j0.314
7.652 − j2.120
450
1.143 + j0.598
7.614 − j1.713
475
1.194 + j0.871
7.512 − j1.348
500
1.251 + j1.137
7.359 − j1.031
525
1.315 + j1.397
7.168 − j0.762
550
1.388 + j1.652
6.949 − j0.542
575
1.470 + j1.903
6.712 − j0.368
600
1.563 + j2.152
6.465 − j0.237
625
1.668 + j2.398
6.214 − j0.145
650
1.788 + j2.642
5.962 − j0.089
675
1.925 + j2.885
5.714 − j0.064
700
2.082 + j3.125
5.472 − j0.066
725
2.262 + j3.362
5.238 − j0.093
750
2.470 + j3.594
5.012 − j0.141
775
2.711 + j3.816
4.796 − j0.207
800
2.989 + j4.025
4.590 − j0.289
825
3.310 + j4.213
4.394 − j0.385
850
3.680 + j4.369
4.208 − j0.493
875
4.103 + j4.478
4.031 − j0.611
900
4.580 + j4.519
3.864 − j0.737
BLF878_1
Preliminary data sheet
Rev. 01 — 15 December 2008
© NXP B.V. 2008. All rights reserved.
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