BLF878(2008) データシートの表示（PDF） - NXP Semiconductors.

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BLF878
(Rev.:2008)

UHF power LDMOS transistor

NXP Semiconductors. 

NXP Semiconductors

BLF878

UHF power LDMOS transistor

I Integrated ESD protection

I Advanced flange material for optimum thermal behavior and reliability

I Excellent ruggedness

I High power gain

I High efficiency

I Designed for broadband operation (470 MHz to 860 MHz)

I Excellent reliability

I Internal input and output matching for high gain and optimum broadband operation

I Easy power control

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

I Communication transmitter applications in the UHF band

I Industrial applications in the UHF band

2. Pinning information

Table 2.

Pin

1

2

3

4

5

Pinning

Description

drain1

drain2

gate1

gate2

source

[1] Connected to flange.

3. Ordering information

Simplified outline

12

5

34

[1]

Graphic symbol

1

3

5

4

2

sym117

Table 3. Ordering information

Type number Package

Name Description

Version

BLF878

-

flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A

BLF878_1

Preliminary data sheet

Rev. 01 — 15 December 2008

© NXP B.V. 2008. All rights reserved.

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