BLF878(2008) データシートの表示（PDF） - NXP Semiconductors.
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BLF878 Datasheet PDF : 18 Pages
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NXP Semiconductors
BLF878
UHF power LDMOS transistor
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
Unit
VDS
drain-source voltage
VGS
gate-source voltage
Tstg
storage temperature
Tj
junction temperature
-
89
V
−0.5 +13
V
−65 +150 °C
-
200
°C
5. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Rth(c-h)
thermal resistance from case to heatsink
Conditions
Tcase = 80 °C;
PL(AV) = 150 W
Typ Unit
[1] 0.23 K/W
[2] 0.15 K/W
[1] Rth(j-c) is measured under RF conditions.
[2] Rth(c-h) is dependent on the applied thermal compound and clamping/mounting of the device.
6. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.25 mA [1] 89 -
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 225 mA [1] 1.4 1.9
IDSS
drain leakage current
VGS = 0 V; VDS = 40 V
--
IDSX
drain cut-off current
VGS = VGSth + 3.75 V;
VDS = 10 V
- 39
IGSS
gfs
RDS(on)
Ciss
gate leakage current
VGS = 10 V; VDS = 0 V
forward transconductance
VGS = 10 V; ID = 11.2 A
drain-source on-state resistance VGS = VGSth + 3.75 V;
ID = 7.6 A
input capacitance
VGS = 0 V; VDS = 40 V;
f = 1 MHz
-
[1] -
[1] -
[2] -
-
15.5
110
190
Coss
output capacitance
VGS = 0 V; VDS = 40 V; [2] - 60
f = 1 MHz
Crss
reverse transfer capacitance
VGS = 0 V; VDS = 40 V; [2] - 2
f = 1 MHz
Max Unit
105 V
2.4 V
2.8 µA
-A
280 nA
-S
- mΩ
- pF
- pF
- pF
[1] ID is the drain current.
[2] Capacitance values without internal matching.
BLF878_1
Preliminary data sheet
Rev. 01 — 15 December 2008
© NXP B.V. 2008. All rights reserved.
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