BLF878(2008) データシートの表示（PDF） - NXP Semiconductors.

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BLF878
(Rev.:2008)

UHF power LDMOS transistor

NXP Semiconductors. 

NXP Semiconductors

BLF878

UHF power LDMOS transistor

350

Coss

(pF)

250

001aai075

150

50

0

20

40

60

VDS (V)

Fig 1.

VGS = 0 V; f = 1 MHz.

Output capacitance as a function of drain-source voltage; typical values per

section; capacitance value without internal matching

7. Application information

Table 7. RF performance in a common-source narrowband 860 MHz test circuit

Tcase = 25 °C unless otherwise specified.

Mode of operation f

VDS IDq PL(PEP) PL(AV) Gp ηD IMD3

(MHz)

(V) (A) (W) (W) (dB) (%) (dBc)

2-tone, class AB f1 = 860; f2 = 860.1 40 1.4[1 300 -

]

> 18 > 42 < −31

PAR

(dB)

-

DVB-T (8k OFDM) 858

40 1.4[1 -

]

75 > 18 > 29 < −29 [2] > 8 [3]

[1] IDq = 1.4 A for total device.

[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

BLF878_1

Preliminary data sheet

Rev. 01 — 15 December 2008

© NXP B.V. 2008. All rights reserved.

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