NXP Semiconductors
BLF878
UHF power LDMOS transistor
7.1.3 DVB-T
23
001aai079
60
−15
001aai080
Gp
(dB)
(2)
(1)
21
Gp
ηD
(%)
40
IMD3
(dBc)
−25
(1)
ηD
(2)
19
20
−35
(1)
(2)
17
0
0
50
100
150
200
250
PL(AV) (W)
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 5.
DVB-T power gain and drain efficiency as
functions of average load power; typical
values
−45
0
50
100
150
200
250
PL(AV) (W)
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 6.
DVB-T third order intermodulation distortion
as a function of average load power; typical
values
BLF878_1
Preliminary data sheet
Rev. 01 — 15 December 2008
© NXP B.V. 2008. All rights reserved.
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