BLW30 データシートの表示（PDF） - Philips Electronics
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BLW30 Datasheet PDF : 11 Pages
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Philips Semiconductors
VHF power transistor
Product specification
BLW30
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
• Excellent reliability
• Withstands full load mismatch.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
f
VCE
PL
GP
(MHz)
(V)
(W)
(dB)
c.w. class-B
175
12.5
30
> 10
ηC
(%)
> 55
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead 3⁄8 inch
SOT120 capstan envelope with a
ceramic cap. It is designed for
common emitter, class-B operation
mobile VHF transmitters with a supply
voltage of 12.5 V. All leads are
isolated from the stud.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
PINNING - SOT120
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
PIN CONFIGURATION
halfpage
4
1
3
handbook, halfpage
c
b
2
MSB056
MBB012
e
Fig.1 Simplified outline and symbol.
September 1991
2
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