BLW30 データシートの表示（PDF） - Philips Electronics

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BLW30

VHF power transistor

Philips Electronics 

Philips Semiconductors

VHF power transistor

Product specification

BLW30

CHARACTERISTICS

Tj = 25 °C.

SYMBOL

PARAMETER

V(BR)CBO

collector-base breakdown voltage

V(BR)CEO

collector-emitter breakdown voltage

V(BR)EBO

emitter-base breakdown voltage

ICES

collector-emitter leakage current

hFE

DC current gain

fT

transition frequency

Cc

collector capacitance

Cre

feedback capacitance

Cc-s

collector-stud capacitance

CONDITIONS

open emitter;

Ic = 10 mA

open base;

Ic = 25 mA

open collector;

IE = 2 mA

VBE = 0;

VCE = 16 V

VCE = 5 V;

IC = 4 A

VCE = 12.5 V;

IE = 4 A;

f = 500 MHz

VCB = 12.5 V;

IE = Ie = 0;

f = 1 MHz

VCE = 12.5 V;

IC = 0;

f = 1 MHz

f = 1 MHz

MIN. TYP. MAX. UNIT

36

−

−

V

16

−

−

V

3

−

−

V

−

−

10

mA

25

35

−

−

1.6

−

GHz

−

90

100

pF

−

60

70

pF

−

2

−

pF

handbook, 5h0alfpage

h FE

40

30

20

10

0

0

4

MRA378

VCE =

12.5 V

VCE = 5 V

8

12

16

IC (A)

Fig.3 DC current gain as a function of collector

current, typical values.

handboo2k,5h0alfpage

Cc

(pF)

200

MRA374.1

150

100

50

0

0

4

8

12

16

VCB (V)

IE = ie = 0; f = 1 MHz.

Fig.4 Collector capacitance as a function of

collector-base voltage, typical values.

September 1991

4

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