BR9080 データシートの表示（PDF） - ROHM Semiconductor
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BR9080 Datasheet PDF : 11 Pages
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Memory ICs
BR9080 / BR9080F / BR9080RFV /
BR9016 / BR9016F / BR9016RFV
zElectrical characteristics
BR9080 / F / RFV, BR9016 / F / RFV: 5V (Unless otherwise noted, Ta=−40∼85°C, VCC=2.7V∼5.5V)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
VIL1
−
− 0.3×VCC V DI pin
VIH1 0.7×VCC −
−
V DI pin
VIL2
−
− 0.2×VCC V CS, SK, WC pin
VIH2 0.8×VCC −
−
V CS, SK, WC pin
VOL
0
−
0.4
V IOL=2.1mA
VOH VCC−0.4 −
VCC
ILI
−1 −
1
V IOH=−0.4mA
µA VIN=0V∼VCC
ILO
−1 −
1
µA VOUT=0V∼VCC, CS=VCC
ICC1
−
−
5
mA fSK=2MHz tE / W=10ms (WRITE)
ICC2
−
−
3
mA fSK=2MHz (READ)
ISB
−
−
3
µA CS / SK / DI / WC=VCC DO, R / B=OPEN
fSK
−
−
2
MHz
−
BR9080 / F / RFV, BR9016 / F / RFV: 3V (Unless otherwise noted, Ta=−40∼85°C, VCC=2.7V∼5.5V)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input low level voltage 1 VIL1
Input high level voltage 1 VIH1
Input low level voltage 2 VIL2
Input high level voltage 2 VIH2
Output low level voltage VOL
Output high level voltage VOH
Input leak current
ILI
Output leak current
ILO
Consumption current
ICC1
during operation
ICC2
Standby current
ISB
SK frequency
fSK
Not designed for radiation resistance
−
−
0.7×VCC −
−
−
0.8×VCC −
0
−
VCC−0.4 −
−1 −
−1 −
−
−
−
−
−
−
−
−
0.3×VCC
−
0.2×VCC
−
0.4
VCC
1
1
3
750
2
2
V
V
V
V
V
V
µA
µA
mA
µA
µA
MHz
DI pin
DI pin
CS, SK, WC pin
CS, SK, WC pin
IOL=100µA
IOH=−100µA
VIN=0V∼VCC
VOUT=0V∼VCC, CS=VCC
fSK=2MHz tE / W=10ms (WRITE)
fSK=2MHz (READ)
CS / SK / DI / WC=VCC DO, R / B=OPEN
−
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