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BR93A76-WM データシートの表示(PDF) - ROHM Semiconductor

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BR93A76-WM
ROHM
ROHM Semiconductor ROHM
BR93A76-WM Datasheet PDF : 41 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series
Technical Note
Absolute Maximum Ratings(Ta=25,BR93L□□-W)
Parameter
Symbol
Impressed voltage
VCC
Permissible dissipation
Pd
Storage temperature range
Tstg
Action temperature range
Topr
Terminal voltage
* When using at Ta=25or higher, 4.5mW(*1,*2), 3.0mW(*3) 3.3mW(*4),
3.1mW(*5, 6), to be reduced per 1.
Absolute Maximum Ratings (Ta=25,BR93A□□-WM)
Parameter
Symbol
Impressed voltage
VCC
Permissible
dissipation
Pd
Storage temperature range
Tstg
Action temperature range
Topr
Terminal voltage
* When using at Ta=25or higher, 4.5mW(*1,*2), 3.1 mW(*3) to be reduced per 1.
Memory cell characteristics (VCC=1.85.5V,BR93L□□-W)
Parameter
Number of data rewrite times *1
Data hold years *1
Shipment data all address FFFFh
*1 Not 100% TESTED
Min.
1,000,000
40
Limit
Typ.
-
-
Memory cell characteristics (VCC=2.55.5V,BR93A□□-WM)
Parameter
Number of data rewrite times *1
Data hold years *1
Shipment data all address FFFFh
*1 Not 100% TESTED
Min.
1,000,000
100,000
40
10
Limit
Typ.
-
-
Recommended action conditions (BR93L□□-W)
Parameter
Power source voltage
Input voltage
Symbol
VCC
VIN
Limits
-0.3+6.5
450 (SOP8) *1
450 (SOP-J8) *2
300 (SSOP-B8) *3
330 (TSSOP-B8) *4
310 (MSOP8) *5
310 (TSSOP-B8J) *6
-65+125
-40+85
-0.3VCC+0.3
Limits
-0.3+6.5
450 (SOP8) *1
450 (SOP-J8) *2
310 (MSOP8) *3
-65+125
-40+105
-0.3VCC+0.3
Max.
-
-
Max.
-
-
Limits
1.85.5
0VCC
Unit
Times
Years
Unit
Times
Years
Unit
V
mW
V
Unit
V
mW
V
Condition
Ta=25
Ta=25
Condition
Ta25
Ta105
Ta25
Ta50
Unit
V
Recommended action conditions (BR93A□□-WM)
Parameter
Symbol
Limits
Unit
Power source voltage
Input voltage
VCC
2.55.5
VIN
0VCC
V
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© 2011 ROHM Co., Ltd. All rights reserved.
3/40
2011.02 - Rev.F

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