BS616UV4016ECG10 データシートの表示（PDF） - Brilliance Semiconductor
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BS616UV4016ECG10 Datasheet PDF : 10 Pages
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BSI
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
BS616UV4016
CYCLE TIME : 85ns CYCLE TIME : 100ns
(VCC=1.9~3.6V)
(VCC=1.9~3.6V)
UNITS
MIN. TYP. MAX. MIN. TYP. MAX.
tAVAX
tWC
Write Cycle Time
85
--
-- 100 --
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
85
--
-- 100 --
--
ns
tELWH
tBLWH
tCW
Chip Select to End of Write
(CE) 85
--
-- 100 --
--
ns
tBW(1)
Data Byte Control to End of Write (LB, UB) 35
--
--
40
--
--
ns
tWLWH
tWHAX
tWP
Write Pulse Width
tWR
Write Recovery Time
40
--
--
50
--
--
ns
(CE, WE) 0
--
--
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
35
--
--
40
ns
tDVWH
tDW
Data to Write Time Overlap
35
--
--
40
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
35
--
--
40
ns
tWHQX
tOW
End of Write to Output Active
10
--
--
10
--
--
ns
NOTE:
1. tBW is 35ns/40ns (@speed=85ns/100ns) with address toggle; tBW is 85ns/100ns (@speed=85ns/100ns) without address toggle.
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
CE
LB, UB
WE
DOUT
DIN
tCW(11)
(5)
tBW
tAS
tOHZ(4,10)
tAW
tWP(2)
tWR(3)
tDH
tDW
R0201-BS616UV4016
7
Revision 1.3
Sep. 2005
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