Q67000-S311 データシートの表示（PDF） - Siemens AG

部品番号

コンポーネント説明

メーカー

Q67000-S311

Mini PROFET®

Siemens AG 

Parameter and Conditions

at Tj = 25 °C, Vbb = 24V unless otherwise specified

Symbol

BSP 550

Values

Unit

min typ max

Operating Parameters

Operating voltage

Tj =-25...+125°C Vbb(on)

12

40

V

Undervoltage shutdown

Tj =-25...+125°C Vbb(under)

7

-- 10.5

V

Undervoltage restart

Tj =-25...+125°C: Vbb(u rst)

--

-- 11

V

Undervoltage hysteresis

∆Vbb(under

-- 0.4

--

V

)

Standby current (pin 4), Vin = low Tj =-25...+100°C Ibb(off)

-- 10 25

µA

Tj =125°C6)

50

Operating current (pin 2), Vin = high

IGND

Tj =-25...+125°C

--

1 1.6 mA

leakage current (pin 1) Vin = low Tj =-25...+125°C IL(off)

--

--

2

µA

Protection Functions

Current limit (pin 4 to 1)

Tj = 25°C IL(SC)

1.4 2.5 4.0

A

Tj = -25...+125°C

1.4

-- 4.8

Overvoltage protection Ibb=4mA Tj =-25...+125°C Vbb(AZ)

48

--

--

V

Output clamp (ind. load switch off)

VON(CL)

-- 72

--

V

VOUT = Vbb - VON(CL), Ibb = 4mA

Thermal overload trip temperature

Tjt

135 150

--

°C

Thermal hysteresis

∆Tjt

-- 10

--

K

Inductive load switch-off energy dissipation7)

EAS

--

-- 0.3

J

Tj Start = 85 °C, single pulse, IL = 1.0 A, Vbb = 12 V

Reverse Battery

Reverse battery voltage8)

Continious reverse drain current

Drain-Source diode voltage

IF = 1 A, Vin = low

TA = 25°C

VOUT>Vbb

-Vbb

-IS

-VON

30

V

--

--

1

A

--

-- 1.2

V

6) increase of standby current at Tj = 125°C caused by temperature sense current

7) while demagnetizing load inductance, dissipated energy is EAS= ∫(VON(CL) * iL(t) dt,

approx.

EAS=

1/2

*

L

*

2

IL

*

(

VON(CL)

VON(CL)-Vbb

)

8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode)

is normally limited by the connected load.

Semiconductor Group

3

Share Link: