BSP550 データシートの表示（PDF） - Infineon Technologies
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BSP550 Datasheet PDF : 7 Pages
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Parameter and Conditions
at Tj = 25 °C, Vbb = 24V unless otherwise specified
Symbol
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
Undervoltage hysteresis
Tj =-25...+125°C
Tj =-25...+125°C
Tj =-25...+125°C:
Standby current (pin 4), Vin = low Tj =-25...+100°C
Tj =125°C6)
Operating current (pin 2), Vin = high
Tj =-25...+125°C
leakage current (pin 1) Vin = low Tj =-25...+125°C
Vbb(on)
Vbb(under)
Vbb(u rst)
∆Vbb(under)
Ibb(off)
IGND
IL(off)
Protection Functions
Current limit (pin 4 to 1)
Tj = 25°C
Tj = -25...+125°C
Overvoltage protection Ibb=4mA Tj =-25...+125°C
Output clamp (ind. load switch off)
VOUT = Vbb - VON(CL), Ibb = 4mA
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation7)
Tj Start = 85 °C, single pulse, IL = 1.0 A, Vbb = 12 V
IL(SC)
Vbb(AZ)
VON(CL)
Tjt
∆Tjt
EAS
Reverse Battery
Reverse battery voltage8)
Continious reverse drain current
Drain-Source diode voltage
IF = 1 A, Vin = low
TA = 25°C
VOUT>Vbb
-Vbb
-IS
-VON
BSP 550
Values
Unit
min
typ max
12
40
V
7
-- 10.5
V
--
--
11
V
--
0.4
--
V
--
10
25 µA
50
--
1
1.6 mA
--
--
2 µA
1.4
2.5
4.0
A
1.4
--
4.8
48
--
--
V
--
72
--
V
135 150
-- °C
--
10
--
K
--
-- 0.3
J
30 V
--
--
1A
--
--
1.2 V
6) increase of standby current at Tj = 125°C caused by temperature sense current
7) while demagnetizing load inductance, dissipated energy is EAS= ∫(VON(CL) * iL(t) dt,
approx.
EAS=
1/2
*
L
*
2
IL
*
(
VON(CL)
VON(CL)-Vbb
)
8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode)
is normally limited by the connected load.
Semiconductor Group
Page 3
20.06.96
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