BSP316P(2007) データシートの表示（PDF） - Infineon Technologies

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BSP316P
(Rev.:2007)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

BSP 316 P

SIPMOS Small-Signal-Transistor

Feature

• P-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

Product Summary

VDS

-100 V

RDS(on) 1.8 Ω

ID

-0.68 A

PG-SOT223-4-1

Gate

pin1

Drain

pin 2/4

Source

pin 3

Type

Package

Tape and Reel Information Marking

BSP 316 P PG-SOT223-4-1 L6327: 1000 pcs/reel

BSP316P

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TA=25°C

TA=70°C

Pulsed drain current

TA=25°C

Reverse diode dv/dt

ID puls

dv/dt

IS=-0.68A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C

Gate source voltage

Power dissipation

TA=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

Value

-0.68

-0.54

-2.72

6

±20

1.8

-55... +150

55/150/56

Unit

A

kV/µs

V

W

°C

Rev.1.5

Page 1

2007-02-23

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