BSP320 データシートの表示（PDF） - Infineon Technologies

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BSP320

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

SIPMOS® Small-Signal-Transistor

Features

• N channel

• Enhancement mode

• Avalanche rated

Product Summary

Drain source voltage

Drain-Source on-state resistance

Continuous drain current

• dv/dt rated

BSP 320S

VDS

60 V

RDS(on) 0.12 Ω

ID

2.9 A

4

Type

BSP320S

Package

SOT-223

Ordering Code

Q67000-S4001

Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified

Parameter

Symbol

Continuous drain current

Pulsed drain current

TA = 25 ˚C

Avalanche energy, single pulse

ID = 2.9 A, VDD = 25 V, RGS = 25 Ω

ID

IDpulse

EAS

Avalanche current,periodic limited by Tjmax

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

IAR

EAR

dv/dt

IS = 2.9 A, VDS = 20 V, di/dt = 200 A/µs,

Tjmax = 150 ˚C

Gate source voltage

VGS

Power dissipation

Ptot

TA = 25 ˚C

Operating temperature

Tj

Storage temperature

Tstg

IEC climatic category; DIN IEC 68-1

Pin 1

G

Pin 2/4

D

3

2

1

VPS05163

Pin 3

S

Value

2.9

11.6

60

2.9

0.18

6

Unit

A

mJ

A

mJ

kV/µs

±20

V

1.8

W

-55 ... +150

˚C

-55 ... +150

55/150/56

Data Sheet

1

05.99

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