BSP320 データシートの表示（PDF） - Infineon Technologies

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BSP320

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

BSP 320S

Electrical Characteristics

Parameter

at Tj = 25 ˚C, unless otherwise specified

Dynamic Characteristics

Transconductance

VDS≥2*ID*RDS(on)max , ID = 2.9 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2.9 A,

RG = 33 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 2.9 A,

RG = 33 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2.9 A,

RG = 33 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 2.9 A,

RG = 33 Ω

Symbol

Values

Unit

min. typ. max.

gfs

Ciss

Coss

Crss

td(on)

2.5 5.8

-S

- 275 340 pF

-

90 120

-

50 65

-

11 17 ns

tr

-

25 40

td(off)

-

25 40

tf

-

35 55

Data Sheet

3

05.99

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