BSS84LT1 データシートの表示（PDF） - Willas Electronic Corp.
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BSS84LT1 Datasheet PDF : 4 Pages
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WILLAS
1.0PA SoUwRFeACrEMMOOUSNTFSECTHOT1T3KY0BmARARImERpRsEC, T5IF0IERVSo-2l0tVs- 200V
SOD-123+ PACKAGE
FM120-M+
BSS84LTT1HRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOT-23
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.122(3.10)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standard.1s 0of6(2.70)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
.080(2.04)
• Weight : Approximated 0.011 gram
.070(1.78)
.008(0.20)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
.004(0.10)MAX.
12
13
14
15
16
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 Volts
Maximum Average Forward Rectified Current
IO
1.0
.020(0.50)
.012(0.30) Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Amps
Amps
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Di
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-c5h5etos+a12n5d
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)
120
-55 to +150
PF
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM01.5003-7MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
0.0V3F7
0.50
0.950.70
0.85
0.9
0.92 Volts
0.9IR5
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
2012-06
2012-10
0.035
0.9
0.031
0.8
inches
mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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