BSS79C データシートの表示（PDF） - TY Semiconductor

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BSS79C

NPN Silicon Switching Transistors

TY Semiconductor 

SMD Type

SMD Type

TransistIoCrs

Product specification

BSS79,BSS81

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

BSS79

Collector-emitter breakdown voltage

BSS81

V(BR)CEO IC = 10 mA, IB = 0

Collector-base breakdown voltage

V(BR)CBO IC = 10 ìA, IE = 0

Emitter-base breakdown voltage

V(BR)EBO IE = 10 ìA, IC = 0

Collector cutoff current

ICBO

VCB = 60 V, IE = 0

VCB = 60 V, IE = 0 , TA = 150

Emitter cutoff current

IEBO VEB = 3 V, IC = 0

BSS79/81B

BSS79/81C

IC = 100ìA, VCE = 10 V

BSS79/81B

BSS79/81C

IC = 1 mA, VCE = 10 V

DC current gain *

BSS79/81B

BSS79/81C

hFE IC = 10 mA, VCE = 10 V

BSS79/81B

BSS79/81C

IC = 150 mA, VCE = 10 V

BSS79/81B

BSS79/82C

IC = 500 mA, VCE = 10 V

Collector-emitter saturation voltage *

IC = 150 mA, IB = 15 mA

VCE(sat)

IC = 500 mA, IB = 50 mA

Base-emitter saturation voltage *

IC = 150 mA, IB = 15 mA

VBE(sat)

IC = 500 mA, IB = 50 mA

Transition frequency

fT IC = 20 mA, VCE = 20 V, f = 100 MHz

Collector-base capacitance

Ccb VCB = 10 V, f = 1 MHz

Delay time

td

VCC = 30 V, IC = 150 mA, IB1 = 15

mA,VBE(off) = 0.5 V

Rise time

tr

VCC = 30 V, IC = 150 mA, IB1 = 15

mA,VBE(off) = 0.5 V

Min Typ Max Unit

40

V

35

75

V

6

V

10 nA

10 ìA

10 nA

20

35

25

50

35

75

40

120

100

300

25

40

0.3

1.3

V

1.2

2.0

250

MHz

6

pF

10 ns

25 ns

Storage time

Fall time

* Pulse test: t

300ìs, D = 2%.

tstg VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA

tf VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA

250 ns

60 ns

hFE Classification

TYPE

Rank

B

Marking

CEs

BSS79

C

CFs

TYPE

Rank

Marking

BSS81

B

C

CDs

CGs

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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