BSS87 データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
BSS87 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to Tamb = 25 °C (1)
Storage temperature range
Junction temperature
VDS
± VGSO
ID
IDM
Ptot
Tstg
Tj
THERMAL RESISTANCE
From junction to ambient (1)
Rth j-a
Note
1. Transistor mounted on ceramic substrate area 2.5 cm2, thickness 0.7 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
ID = 250 µA; VGS = 0
Drain-source leakage current
VDS = 60 V; VGS = 0
VDS = 200 V; VGS = 0
Gate-source leakage current
VGS = 20 V; VDS = 0
Gate threshold voltage
ID = 1 mA; VDS = VGS
Drain-source on-resistance
ID = 400 mA; VGS = 10 V
Transfer admittance
ID = 400 mA; VDS = 25 V
Input capacitance f = 1 MHz;
VDS = 25 V; VGS = 0
Output capacitance f = 1 MHz;
VDS = 25 V; VGS = 0
V(BR) DSS
IDSS
IDSS
IGSS
VGS(th)
RDS(on)
| Yfs|
Ciss
Coss
Product specification
BSS87
max. 200 V
max. 20 V
max. 280 mA
max. 1.1 A
max.
1W
−65 to + 150 °C
max. 150 °C
=
125 K/W
min. 200 V
max.
max.
typ.
200 nA
60 µA
100 nA
max.
min.
max.
100 nA
0.8 V
2.8 V
max.
typ.
6Ω
4.5 Ω
typ.
350 mS
min. 140 mS
max.
typ.
60 pF
45 pF
max.
typ.
25 pF
15 pF
April 1995
3
Share Link: 