BT136BSERIESE データシートの表示（PDF） - Philips Electronics
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BT136BSERIESE Datasheet PDF : 6 Pages
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Philips Semiconductors
Triacs
sensitive gate
Product specification
BT136B series E
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
minimum footprint, FR4 board
junction to ambient
MIN.
-
-
-
TYP.
-
-
55
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
MIN. TYP. MAX. UNIT
-
2.5 10 mA
-
4.0 10 mA
-
5.0 10 mA
-
11 25 mA
-
3.0 15 mA
-
10 20 mA
-
2.5 15 mA
-
4.0 20 mA
-
2.2 15 mA
-
1.4 1.70 V
-
0.7 1.5 V
0.25 0.4
-
V
-
0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
ITM = 6 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
MIN.
-
-
TYP. MAX. UNIT
50
- V/µs
2
-
µs
March 1997
2
Rev 1.000
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