BTA204-500D データシートの表示（PDF） - Philips Electronics
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BTA204-500D Datasheet PDF : 6 Pages
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Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA204 series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
60
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA204-
...D ...E ...F
IGT
Gate trigger current2
VD = 12 V; IT = 0.1 A
T2+ G+
-
-
5
10 25 mA
T2+ G-
-
-
5
10 25 mA
T2- G-
-
-
5
10 25 mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
-
-
6
12 20 mA
T2+ G-
-
-
9
18 30 mA
T2- G-
-
-
6
12 20 mA
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
-
6
12 20 mA
VT
On-state voltage
IT = 5 A
-
1.4
1.7
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A;
0.25 0.4
-
V
Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max);
-
0.1
0.5
mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA204- ...D ...E ...F
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
20
Tj = 125 ˚C; exponential
waveform; gate open
30 50
-
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 1.0 2.0 2.5
-
commutating current
IT(RMS) = 4 A;
dVcom/dt = 20V/µs; gate
open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 5.0
-
-
-
commutating current
IT(RMS) = 4 A;
dVcom/dt = 0.1V/µs; gate
open circuit
tgt
Gate controlled turn-on ITM = 12 A; VD = VDRM(max); -
-
-
2
time
IG = 0.1 A; dIG/dt = 5 A/µs
- V/µs
- A/ms
- A/ms
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000
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