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BTS134D(2004) データシートの表示(PDF) - Infineon Technologies

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BTS134D
(Rev.:2004)
Infineon
Infineon Technologies Infineon
BTS134D Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Electrical Characteristics
Parameter
at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time VIN to 10% ID:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature
Thermal hysteresis 2)
Input current protection mode
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 3 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
IF = 15 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
BTS 134 D
Symbol
Values
Unit
min. typ. max.
ton
-
toff
-
-dVDS/dton -
dVDS/dtoff
-
60 100 µs
60 100
0.3 1.5 V/µs
0.7 1.5
Tjt
DTjt
IIN(Prot)
150 175 - °C
-
10
-K
- 130 300 µA
EAS
3
-
-J
VSD
-
1.0 1.5 V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Page 4
2004-03-05

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