BTS716G(2007) データシートの表示（PDF） - Infineon Technologies

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BTS716G
(Rev.:2007)

Smart High-Side Power Switch Four Channels: 4 x 140mΩ Status Feedback

Infineon Technologies 

Smart High-Side Power Switch

BTS716G

GND disconnect with GND pull up

,1

9EE

352)(7 287

67

*1'

9EE

9,1 967

9*1'

Any kind of load. If VGND > VIN - VIN(T+) device stays off

Due to VGND > 0, no VST = low signal available.

Vbb disconnect with energized inductive

load

Inductive load switch-off energy

dissipation

( EE

,1

9EE

( $6

(/RD

352)(7 287

67

*1'

/

^=/

(/

(5

5/

Energy stored in load inductance:

EL = 1/2·L·I2L

While demagnetizing load inductance, the energy

dissipated in PROFET is

KLJK

,1

9EE

352)(7 287

67

*1'

9EE

EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,

with an approximate solution for RL > 0 Ω:

EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)

OQ

(1+

IL·RL

|VOUT(CL)|

)

Maximum allowable load inductance for

a single switch off (one channel)4)

/ I ,/  Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω

For inductive load currents up to the limits defined by ZL

(max. ratings and diagram on page 10) each switch is

protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb dis-

connection with energized inductive load all the load current

flows through the GND connection.

ZL [mH]







Data Sheet















IL [A]

10

V1.0, 2007-05-13

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