BTS716G(2007) データシートの表示（PDF） - Infineon Technologies
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BTS716G
(Rev.:2007)
(Rev.:2007)
Infineon Technologies
BTS716G Datasheet PDF : 16 Pages
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Smart High-Side Power Switch
BTS716G
Parameter
Symbol
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 6)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 Ω, td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
(all channels active)
Ta = 25°C:
Ta = 85°C:
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10
IL = 2.3 A, EAS = 76 mJ, 0 Ω
one channel:
IL = 3.3 A, EAS = 182 mJ, 0 Ω two parallel channels:
IL = 4.7 A, EAS = 460 mJ, 0 Ω four parallel channels:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC) see internal circuit diagram page 9
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
Vbb
Vbb
IL
VLoad dump3)
Tj
Tstg
Ptot
ZL
VESD
VIN
IIN
IIN
IST
Values Unit
43 V
36 V
self-limited A
60 V
-40 ...+150 °C
-55 ...+150
3.6 W
1.9
21 mH
25
30
1.0 kV
4.0
8.0
-10 ... +16 V
±0.3 mA
±5.0
±5.0
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5) only for testing
Data Sheet
4
V1.0, 2007-05-13
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