BTS716G データシートの表示（PDF） - Infineon Technologies
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BTS716G Datasheet PDF : 14 Pages
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BTS 716G
GND disconnect with GND pull up
IN
Vbb
PROFET OUT
ST
GND
Vbb
VIN VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load
Inductive load switch-off energy
dissipation
E bb
E AS
IN
Vbb
ELoad
PROFET OUT
=
ST
GND
{L
ZL
EL
ER
RL
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
high
IN
Vbb
PROFET OUT
ST
GND
Vbb
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off (one channel)4)
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
ZL [mH]
1000
100
10
Infineon Technologies AG
1
1
2
3
4
5
6
IL [A]
10 of 14
2003-Oct-01
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