BTS716G データシートの表示（PDF） - Infineon Technologies
部品番号
コンポーネント説明
メーカー
BTS716G Datasheet PDF : 14 Pages
| |||
BTS 716G
Input circuit (ESD protection), IN1 to IN4
IN
RI
ESD-ZD I
II
GND
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
Status output, ST1/2 or ST3/4
+5V
R ST(ON)
ST
Overvolt. and reverse batt. protection
+ 5V
+ Vbb
R ST
VZ2
IN R I
Logic
R ST ST
VZ1
OUT
R GND
Signal GND
GND R Load
Load GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 3.5 kΩ typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
GND
ESD-
ZD
Open-load detection, OUT1...4
OFF-state diagnostic condition:
Open Load, if VOUT > 3 V typ.; IN low
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
Vbb
Inductive and overvoltage output clamp,
OUT1...4
+Vbb
VZ
V ON
OUT
OFF
Logic
unit
Open load
detection
Signal GND
REXT
VOUT
GND disconnect
Power GND
VON clamped to VON(CL) = 47 V typ.
Vbb VIN VST
IN
Vbb
PROFET OUT
ST
GND
VGND
Infineon Technologies AG
Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
9 of 14
2003-Oct-01
Share Link: 