Q67060-S6072-A101 データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

Q67060-S6072-A101

Smart Highside Power Switch

Infineon Technologies 

Data sheet BTS 6133 D

Reversave (Reverse battery protection)

-Vbb

R bb

IN

R IN

Logic

OUT

Power

Transistor

D

R IS

Signal GND

RL

Power GND

RIS typ. 1 kΩ. Add RIN for reverse battery protection in

applications with Vbb above 16V;

11

0.08 A

recommended value: RIN + RIS = | Vbb | −12V

Vbb disconnect with energised inductive

load

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (VZL+VD<39 V if

RIN = 0). For higher clamp voltages currents at IN and

IS have to be limited to 120 mA.

Version a:

Vbb

V bb

IN PROFET OUT

IS

VD

VZL

To minimise power dissipation at reverse battery

operation, the overall current into the IN and IS pin

should be about 80mA. The current can be provided by

using a small signal diode D in parallel to the input

switch, by using a MOSFET input switch or by proper

adjusting the current through RIS.

Since the current via Rbb generates additional heat in

the device, this has to be taken into account in the

overall thermal consideration.

Inversave (Inverse current operation)

Vbb

+

-

VIN

Vbb

- IL

IN PROFET OUT

IS

IIS

VIS

R IS

VOUT +

-

The device can be operated in inverse load current

mode (VOUT > Vbb > 0V). The current sense feature is

not available during this kind of operation (IIS= IIS(LH)).

With IIN = 0 (e.g. input open) only the intrinsic drain

source diode is conducting resulting in considerably

increased power dissipation. If the device is switched

on (VIN = 0), the power dissipation is decreased to the

much lower value RON(INV) * I2 as long as a maximum

current IL(inv) is not exceeded(see on p4).

Note: Temperature protection during inverse load

current operation is not possible!

Infineon Technologies AG

Page 10 of 15

2002-08-07

Share Link: